Satılmıs¸ G, Günes¸ F, Mahouti P.

In this work, physical parameter‐based modeling of small signal parameters for a metal‐semiconductor field‐effect transistor (MESFET) has been carried out as continuous functions of drain voltage, gate voltage, frequency, and gate width. For this purpose, a device simulator has been used to generate a big dataset of which the physical device parameters included material type, doping concentration and profile, contact type, gate length, gate width, and work function.

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[1] Gökhan Satılmış, Filiz Güneş, Peyman Mahouti, "Physical parameter-based data-driven modeling of small signal parameters of a metal-semiconductor field-effect transistor", IEEE Dataport, 2020. [Online]. Available: http://dx.doi.org/10.21227/h9ba-sf59. Accessed: Feb. 29, 2024.
@data{h9ba-sf59-20,
doi = {10.21227/h9ba-sf59},
url = {http://dx.doi.org/10.21227/h9ba-sf59},
author = {Gökhan Satılmış; Filiz Güneş; Peyman Mahouti },
publisher = {IEEE Dataport},
title = {Physical parameter-based data-driven modeling of small signal parameters of a metal-semiconductor field-effect transistor},
year = {2020} }
TY - DATA
T1 - Physical parameter-based data-driven modeling of small signal parameters of a metal-semiconductor field-effect transistor
AU - Gökhan Satılmış; Filiz Güneş; Peyman Mahouti
PY - 2020
PB - IEEE Dataport
UR - 10.21227/h9ba-sf59
ER -
Gökhan Satılmış, Filiz Güneş, Peyman Mahouti. (2020). Physical parameter-based data-driven modeling of small signal parameters of a metal-semiconductor field-effect transistor. IEEE Dataport. http://dx.doi.org/10.21227/h9ba-sf59
Gökhan Satılmış, Filiz Güneş, Peyman Mahouti, 2020. Physical parameter-based data-driven modeling of small signal parameters of a metal-semiconductor field-effect transistor. Available at: http://dx.doi.org/10.21227/h9ba-sf59.
Gökhan Satılmış, Filiz Güneş, Peyman Mahouti. (2020). "Physical parameter-based data-driven modeling of small signal parameters of a metal-semiconductor field-effect transistor." Web.
1. Gökhan Satılmış, Filiz Güneş, Peyman Mahouti. Physical parameter-based data-driven modeling of small signal parameters of a metal-semiconductor field-effect transistor [Internet]. IEEE Dataport; 2020. Available from : http://dx.doi.org/10.21227/h9ba-sf59
Gökhan Satılmış, Filiz Güneş, Peyman Mahouti. "Physical parameter-based data-driven modeling of small signal parameters of a metal-semiconductor field-effect transistor." doi: 10.21227/h9ba-sf59