2.4 kV Ga2O3 SBD Measured from room temperature to 500 ℃

This study presents the electrical characteristics of a Ga₂O₃ Schottky barrier diode with a field plate, evaluated through forward I-V, reverse I-V, and C-V measurements across a temperature range from room temperature to 500°C. The field plate design incorporated a 1 μm deep trench filled with alternating layers of SiO₂ and SiNx. The diode demonstrated a maximum breakdown voltage of 2.4 kV. The device is heavily degraded at high temperatures with the breakdown voltage decreasing to less than 100 V at 500 °C. The C-V and forward I-V show that there a is a high density of interface states at higher temperatures along with a decreasing barrier height.