As semiconductor devices have become increasingly miniaturized, the ability to control very small Critical Dimensions (CDs) during the etching process has become crucial through controlled plasma processes. Consequently, diagnosing plasma and reflecting this in the process to enhance yield is of paramount importance. Typically, an invasive sensor like a Single Langmuir Probe (SLP) is utilized for plasma diagnostics. However, using this sensor can affect the plasma, necessitating the use of non-invasive diagnostic methods.