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First Name:
Yuhang
Last Name:
Zhang
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This paper introduces the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Electrical Simulation Dataset, MESD, an extensive collection of I-V and C-V characteristics data simulated across different foundries' Berkeley Short-channel IGFET Models (BSIMs). The MESD dataset covers a range of bias voltages, temperatures, and MOSFET physical dimensions across several technology nodes from 3 to 350 nm.
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The IEEE Xplore database is vital in democratizing access to high-quality research datasets, fostering global collaboration, and promoting interdisciplinary studies. Insights from the IEEE Xplore database support applications in academic collaboration networks, predictive research trends, recommendation systems, and the evolution of scientific discourse. Our cirdc dataset extracts key information of all articles in the IEEE Xplore database using web data mining methods. Source codes and scripts for data collection are provided to promote transparency and reproducibility.
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92 Views