In this study, experiments were conducted to etch SiO₂ and Si₃N₄ by introducing N₂ at flow rates of 0, 2, 4, 6, and 8 sccm into a CF₄/O₂ plasma. OES (Optical Emission Spectroscopy) data were systematically collected and analyzed under each condition to understand the impact of N₂ addition on plasma chemistry. Machine learning techniques were applied to identify specific OES wavelengths that are critical to the etch rate and selectivity of both materials. Furthermore, the importance of the selected wavelengths was determined using XAI (Explainable Artificial Intelligence) methods.

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[1] Jeongeun Jeon, "Study on Etching Characteristics of Oxide and Nitride in N₂-Mixed CF₄/O₂ Plasma via OES Analysis", IEEE Dataport, 2024. [Online]. Available: http://dx.doi.org/10.21227/65x1-n014. Accessed: Dec. 21, 2024.
@data{65x1-n014-24,
doi = {10.21227/65x1-n014},
url = {http://dx.doi.org/10.21227/65x1-n014},
author = {Jeongeun Jeon },
publisher = {IEEE Dataport},
title = {Study on Etching Characteristics of Oxide and Nitride in N₂-Mixed CF₄/O₂ Plasma via OES Analysis},
year = {2024} }
TY - DATA
T1 - Study on Etching Characteristics of Oxide and Nitride in N₂-Mixed CF₄/O₂ Plasma via OES Analysis
AU - Jeongeun Jeon
PY - 2024
PB - IEEE Dataport
UR - 10.21227/65x1-n014
ER -
Jeongeun Jeon. (2024). Study on Etching Characteristics of Oxide and Nitride in N₂-Mixed CF₄/O₂ Plasma via OES Analysis. IEEE Dataport. http://dx.doi.org/10.21227/65x1-n014
Jeongeun Jeon, 2024. Study on Etching Characteristics of Oxide and Nitride in N₂-Mixed CF₄/O₂ Plasma via OES Analysis. Available at: http://dx.doi.org/10.21227/65x1-n014.
Jeongeun Jeon. (2024). "Study on Etching Characteristics of Oxide and Nitride in N₂-Mixed CF₄/O₂ Plasma via OES Analysis." Web.
1. Jeongeun Jeon. Study on Etching Characteristics of Oxide and Nitride in N₂-Mixed CF₄/O₂ Plasma via OES Analysis [Internet]. IEEE Dataport; 2024. Available from : http://dx.doi.org/10.21227/65x1-n014
Jeongeun Jeon. "Study on Etching Characteristics of Oxide and Nitride in N₂-Mixed CF₄/O₂ Plasma via OES Analysis." doi: 10.21227/65x1-n014