Mohammadreza Ghamkhar

In this paper, a novel silicon-on-insulator (SOI) lateral-double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) is presented. Changing charge distribution leads to lower electric field crowding and increased breakdown voltage (VBR). For modifying charge distribution, a metal region (COLUMN) and an air layer inside the transistor are utilized. On the other the floating-body effect and impact ionization generate excess holes that are amplified by the parasitic bipolar junction transistor (BJT) in SOI-LDMOSFET that degrade the transistor performance.

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Mohammadreza Ghamkhar [1] Mohammadreza Ghamkhar, "A Novel SOI-LDMOSFET With Superior Electrical Performances", IEEE Dataport, 2018. [Online]. Available: http://dx.doi.org/10.21227/e2s1-ay90. Accessed: Feb. 25, 2024.
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doi = {10.21227/e2s1-ay90},
url = {http://dx.doi.org/10.21227/e2s1-ay90},
author = {Mohammadreza Ghamkhar },
publisher = {IEEE Dataport},
title = {A Novel SOI-LDMOSFET With Superior Electrical Performances},
year = {2018} }
TY - DATA
T1 - A Novel SOI-LDMOSFET With Superior Electrical Performances
AU - Mohammadreza Ghamkhar
PY - 2018
PB - IEEE Dataport
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Mohammadreza Ghamkhar. (2018). A Novel SOI-LDMOSFET With Superior Electrical Performances. IEEE Dataport. http://dx.doi.org/10.21227/e2s1-ay90
Mohammadreza Ghamkhar, 2018. A Novel SOI-LDMOSFET With Superior Electrical Performances. Available at: http://dx.doi.org/10.21227/e2s1-ay90.
Mohammadreza Ghamkhar. (2018). "A Novel SOI-LDMOSFET With Superior Electrical Performances." Web.
1. Mohammadreza Ghamkhar. A Novel SOI-LDMOSFET With Superior Electrical Performances [Internet]. IEEE Dataport; 2018. Available from : http://dx.doi.org/10.21227/e2s1-ay90
Mohammadreza Ghamkhar. "A Novel SOI-LDMOSFET With Superior Electrical Performances." doi: 10.21227/e2s1-ay90