In current study, a new silicon-on-insulator (SOI) lateral-double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) is offered. Altering charge distribution causes less electric field crowding and enhanced breakdown voltage (VBR). For amending charge distribution, a metal region (COLUMN) and an air layer in the transistor are used.

DOI Link: 
10.21227/rpz9-vd50
Read more

Dataset Files

You must be an IEEE Dataport Subscriber to access these files. Subscribe now or login.

Documentation: 
AttachmentSize
File my paper - A Novel SOI-LDMOSFET With Superior Electrical Performances6.08 MB
File figures and tables3.18 MB
[1] Mohammadreza Ghamkhar, "A Novel SOI-LDMOSFET With Superior Electrical Performances", IEEE Dataport, 2019. [Online]. Available: http://dx.doi.org/10.21227/rpz9-vd50. Accessed: Apr. 23, 2025.
@data{rpz9-vd50-19,
doi = {10.21227/rpz9-vd50},
url = {http://dx.doi.org/10.21227/rpz9-vd50},
author = {Mohammadreza Ghamkhar },
publisher = {IEEE Dataport},
title = {A Novel SOI-LDMOSFET With Superior Electrical Performances},
year = {2019} }
TY - DATA
T1 - A Novel SOI-LDMOSFET With Superior Electrical Performances
AU - Mohammadreza Ghamkhar
PY - 2019
PB - IEEE Dataport
UR - 10.21227/rpz9-vd50
ER -
Mohammadreza Ghamkhar. (2019). A Novel SOI-LDMOSFET With Superior Electrical Performances. IEEE Dataport. http://dx.doi.org/10.21227/rpz9-vd50
Mohammadreza Ghamkhar, 2019. A Novel SOI-LDMOSFET With Superior Electrical Performances. Available at: http://dx.doi.org/10.21227/rpz9-vd50.
Mohammadreza Ghamkhar. (2019). "A Novel SOI-LDMOSFET With Superior Electrical Performances." Web.
1. Mohammadreza Ghamkhar. A Novel SOI-LDMOSFET With Superior Electrical Performances [Internet]. IEEE Dataport; 2019. Available from : http://dx.doi.org/10.21227/rpz9-vd50
Mohammadreza Ghamkhar. "A Novel SOI-LDMOSFET With Superior Electrical Performances." doi: 10.21227/rpz9-vd50