Maintaining etch uniformity from the center to the edge of the wafer during the etching process is a critical challenge. In particular, the edge of the wafer poses difficulties due to changes in the angle of ion incidence caused by the curvature of the sheath, making it challenging to achieve the desired etch pattern. Therefore, identifying and monitoring key factors that significantly impact center-to-edge uniformity is essential.

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[1] SangJeen Hong, YunSeong Cho, "Monitoring O₂ Plasma Parameters with a Single Langmuir Probe and OES in a 6-Inch ICP Etcher", IEEE Dataport, 2024. [Online]. Available: http://dx.doi.org/10.21227/m0ma-pm28. Accessed: Feb. 18, 2025.
@data{m0ma-pm28-24,
doi = {10.21227/m0ma-pm28},
url = {http://dx.doi.org/10.21227/m0ma-pm28},
author = {SangJeen Hong; YunSeong Cho },
publisher = {IEEE Dataport},
title = {Monitoring O₂ Plasma Parameters with a Single Langmuir Probe and OES in a 6-Inch ICP Etcher},
year = {2024} }
TY - DATA
T1 - Monitoring O₂ Plasma Parameters with a Single Langmuir Probe and OES in a 6-Inch ICP Etcher
AU - SangJeen Hong; YunSeong Cho
PY - 2024
PB - IEEE Dataport
UR - 10.21227/m0ma-pm28
ER -
SangJeen Hong, YunSeong Cho. (2024). Monitoring O₂ Plasma Parameters with a Single Langmuir Probe and OES in a 6-Inch ICP Etcher. IEEE Dataport. http://dx.doi.org/10.21227/m0ma-pm28
SangJeen Hong, YunSeong Cho, 2024. Monitoring O₂ Plasma Parameters with a Single Langmuir Probe and OES in a 6-Inch ICP Etcher. Available at: http://dx.doi.org/10.21227/m0ma-pm28.
SangJeen Hong, YunSeong Cho. (2024). "Monitoring O₂ Plasma Parameters with a Single Langmuir Probe and OES in a 6-Inch ICP Etcher." Web.
1. SangJeen Hong, YunSeong Cho. Monitoring O₂ Plasma Parameters with a Single Langmuir Probe and OES in a 6-Inch ICP Etcher [Internet]. IEEE Dataport; 2024. Available from : http://dx.doi.org/10.21227/m0ma-pm28
SangJeen Hong, YunSeong Cho. "Monitoring O₂ Plasma Parameters with a Single Langmuir Probe and OES in a 6-Inch ICP Etcher." doi: 10.21227/m0ma-pm28