This study investigates the worst-case Single-Event Effect (SEE) response in semiconductor
power devices induced by energetic ions. An existing predictive model is refined and extended to potentially
consider various semiconductor materials, other geometries and technologies. Comprehensive expressions
for predicting critical ion energies that lead to worst-case SEE response in semiconductor power devices are
obtained through computational simulations. A dedicated experiment is conducted to investigate the model

DOI Link: 
10.21227/nvjw-1p86
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[1] Saulo Alberton, "Improved Prediction Model of Ion-Induced Worst-Case Response in Power Devices", IEEE Dataport, 2024. [Online]. Available: http://dx.doi.org/10.21227/nvjw-1p86. Accessed: Mar. 18, 2025.
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doi = {10.21227/nvjw-1p86},
url = {http://dx.doi.org/10.21227/nvjw-1p86},
author = {Saulo Alberton },
publisher = {IEEE Dataport},
title = {Improved Prediction Model of Ion-Induced Worst-Case Response in Power Devices},
year = {2024} }
TY - DATA
T1 - Improved Prediction Model of Ion-Induced Worst-Case Response in Power Devices
AU - Saulo Alberton
PY - 2024
PB - IEEE Dataport
UR - 10.21227/nvjw-1p86
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Saulo Alberton. (2024). Improved Prediction Model of Ion-Induced Worst-Case Response in Power Devices. IEEE Dataport. http://dx.doi.org/10.21227/nvjw-1p86
Saulo Alberton, 2024. Improved Prediction Model of Ion-Induced Worst-Case Response in Power Devices. Available at: http://dx.doi.org/10.21227/nvjw-1p86.
Saulo Alberton. (2024). "Improved Prediction Model of Ion-Induced Worst-Case Response in Power Devices." Web.
1. Saulo Alberton. Improved Prediction Model of Ion-Induced Worst-Case Response in Power Devices [Internet]. IEEE Dataport; 2024. Available from : http://dx.doi.org/10.21227/nvjw-1p86
Saulo Alberton. "Improved Prediction Model of Ion-Induced Worst-Case Response in Power Devices." doi: 10.21227/nvjw-1p86